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| SI4433DY New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = -4.5 V -20 0.160 @ VGS = -2.5 V 0.240 @ VGS = -1.8 V FEATURES ID (A) -3.9 -3.2 -2.6 D TrenchFETr Power MOSFET D Fast Switching APPLICATION D DC-DC Conversion D Asynchronous Buck Converter D Voltage Inverter S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS -2.1 2.5 1.3 -55 to 150 -2.8 -10 -1.2 1.4 0.7 W _C -2.1 A Symbol VDS VGS 10 secs Steady State -20 "8 Unit V -3.9 -2.9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71663 S-04245--Rev. A, 16-Jul-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 75 19 Maximum 50 90 25 Unit _C/W C/W 1 SI4433DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS p -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -2.7 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -2.7 A IS = -0.9 A, VGS = 0 V -10 0.095 0.137 0.205 7 -0.8 -1.2 0.110 0.160 0.240 S V W -0.45 "100 -1 -5 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -0.9 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -2.7 A 4.4 1.4 0.65 16 30 30 27 20 25 45 45 40 40 ns 6.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 3 V 8 I D - Drain Current (A) 2.5 V I D - Drain Current (A) 8 10 Transfer Characteristics TC = -55_C 25_C 6 2V 4 6 125_C 4 2 1.5 V 0 0.0 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71663 S-04245--Rev. A, 16-Jul-01 www.vishay.com 2 SI4433DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.6 VGS = 1.8 V r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) 600 Ciss 800 Vishay Siliconix Capacitance 0.4 0.3 VGS = 2.5 V VGS = 4.5 V 0.1 400 0.2 200 Coss Crss 0.0 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.7 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.7 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 1.2 2 1.0 1 0.8 0 0 1 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) ID = 2.7 A 0.3 I S - Source Current (A) TJ = 150_C 0.2 TJ = 25_C 0.1 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71663 S-04245--Rev. A, 16-Jul-01 www.vishay.com 3 SI4433DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.1 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 71663 S-04245--Rev. A, 16-Jul-01 |
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